The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Jun. 14, 2011
Hanhong Chen, San Jose, CA (US);
Wim Deweerd, San Jose, CA (US);
Xiangxin Rui, Campbell, CA (US);
Sandra Malhotra, San Jose, CA (US);
Hiroyuki Ode, Hiroshima, JP;
Hanhong Chen, San Jose, CA (US);
Wim Deweerd, San Jose, CA (US);
Xiangxin Rui, Campbell, CA (US);
Sandra Malhotra, San Jose, CA (US);
Hiroyuki Ode, Hiroshima, JP;
Intermolecular, Inc., San Jose, CA (US);
Elpida Memory, Inc., Tokyo, JP;
Abstract
A method for processing dielectric materials and electrodes to decrease leakage current is disclosed. The method includes a post dielectric anneal treatment in an oxidizing atmosphere to reduce the concentration of oxygen vacancies in the dielectric material. The method further includes a post metallization anneal treatment in an oxidizing atmosphere to reduce the concentration of interface states at the electrode/dielectric interface and to further reduce the concentration of oxygen vacancies in the dielectric material.