The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Dec. 28, 2011
Wun-jie Lin, Hsin-Chu, TW;
Ching-hsiung Lo, Jhubei, TW;
Jen-chou Tseng, Jhudong Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An electrostatic discharge (ESD) protection device includes a well region formed from semiconductor material with a first doping type and a floating base formed from semiconductor material with a second doping type. The floating base is disposed vertically above the well region. The ESD also includes a first terminal receiving region formed from semiconductor material with a third doping type. The first terminal receiving region is disposed vertically above the floating base. The ESD further includes a second terminal receiving region. The second terminal receiving region is laterally spaced apart from the first terminal receiving region by silicon trench isolation (STI) region. In some embodiments, the second terminal receiving region is formed from semiconductor material with the third doping type to form a bipolar junction transmitter (BJT) or with a fourth doping type to form a silicon controlled rectifier (SCR).