The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2014

Filed:

Sep. 14, 2011
Applicants:

Stefan Flachowsky, Dresden, DE;

Stephan-detlef Kronholz, Dresden, DE;

Jan Hoentschel, Dresden, DE;

Thilo Scheiper, Dresden, DE;

Inventors:

Stefan Flachowsky, Dresden, DE;

Stephan-Detlef Kronholz, Dresden, DE;

Jan Hoentschel, Dresden, DE;

Thilo Scheiper, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/165 (2013.01); H01L 29/7848 (2013.01); H01L 29/6659 (2013.01); H01L 29/66636 (2013.01); H01L 29/7834 (2013.01);
Abstract

In sophisticated transistors, a specifically designed semiconductor material, such as a strain-inducing semiconductor material, may be sequentially provided in the drain region and the source region, thereby enabling a significant degree of lateral extension of the grown semiconductor materials without jeopardizing mechanical integrity of the transistor during the processing thereof. For example, semiconductor devices having different drain and source sides may be provided on the basis of sequentially provided embedded semiconductor materials.


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