The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Feb. 20, 2013
Qualcomm Incorporated, San Diego, CA (US);
Omar J. Bchir, San Marcos, CA (US);
Milind P. Shah, San Diego, CA (US);
Houssam W. Jomaa, San Diego, CA (US);
Manuel Aldrete, San Diego, CA (US);
Chin-Kwan Kim, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Some implementations provide a semiconductor device that includes a die, an under bump metallization (UBM) structure coupled to the die, and a barrier layer. The UBM structure has a first oxide property. The barrier layer has a second oxide property that is more resistant to oxide removal from a flux material than the first oxide property of the UBM structure. The barrier layer includes a top portion, a bottom portion and a side portion. The top portion is coupled to the UBM structure, and the side portion is substantially oxidized.