The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Sep. 30, 2008
Henry D. Bathan, Singapore, SG;
Zigmund R. Camacho, Signapore, SG;
Jairus L. Pisigan, Singapore, SG;
Henry D. Bathan, Singapore, SG;
Zigmund R. Camacho, Signapore, SG;
Jairus L. Pisigan, Singapore, SG;
STATS ChipPAC, Ltd., Singapore, SG;
Abstract
A semiconductor device is made by forming solder bumps on a first side of a semiconductor wafer. A protective layer is formed on a second side of the semiconductor wafer opposite the first side. The protective layer can be adhesive paste, laminated film, spin-coated resin, epoxy based elastomer, organic rubbery material, polystyrene, polyethylene terephthalate, or other polymer material. The semiconductor wafer is singulated into semiconductor die. The semiconductor die is mounted to a carrier. A molding compound is formed around the semiconductor die. The protective layer provides stress relief for the semiconductor die. The protective layer is removed from the semiconductor die. The protective layer can provide a thermal dissipation, in which case it is made with metal or polymer-based material with a filler such as alumina, zinc oxide, silicon dioxide, silver, aluminum, and aluminum nitride.