The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Nov. 30, 2011
In-jun Hwang, Hwaseong-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Jae-joon OH, Seongnam-si, KR;
Jong-bong Ha, Yongin-si, KR;
Hyuk-soon Choi, Hwaseong-si, KR;
Ki-ha Hong, Cheonan-si, KR;
In-jun Hwang, Hwaseong-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Jae-joon Oh, Seongnam-si, KR;
Jong-bong Ha, Yongin-si, KR;
Hyuk-soon Choi, Hwaseong-si, KR;
Ki-ha Hong, Cheonan-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
High electron mobility transistors (HEMTs) and methods of manufacturing the same. A HEMT may include a channel layer and a channel supply layer, and the channel supply layer may be a multilayer structure. The channel supply layer may include an etch stop layer and an upper layer on the etch stop layer. A recess region may be in the upper layer. The recess region may be a region recessed to an interface between the upper layer and the etch stop layer. A gate electrode may be on the recess region.