The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Dec. 27, 2010
Munirathna Padmanaban, Bridgewater, NJ (US);
Jin LI, Shizuoka, JP;
Toru Koike, Shizuoka, JP;
Yusuke Takano, Shizuoka, JP;
Kazunori Kurosawa, Shizuoka, JP;
Munirathna Padmanaban, Bridgewater, NJ (US);
Jin Li, Shizuoka, JP;
Toru Koike, Shizuoka, JP;
Yusuke Takano, Shizuoka, JP;
Kazunori Kurosawa, Shizuoka, JP;
AZ Electronic Materials USA Corp., Somerville, NJ (US);
Abstract
There are provided a composition for forming a superfine pattern and a method employing the same for forming a superfine pattern. The composition enables to simply produce a superfine pattern with high mass productivity. The composition comprises perhydropolysilazane (I), silicon-containing polymer (II) having a hydrocarbon group, and a solvent. The mixture of those polymers contains silicon-hydrogen bonds and silicon-hydrocarbon group bonds in such amounts that the number of the silicon-hydrocarbon group bonds is in a ratio of 1 to 44% based on the total number of the silicon-hydrogen bonds and the silicon-hydrocarbon group bonds. The composition is applied on a resist pattern to form a spacer formed of the composition on the side wall of the ridges in the pattern, and then the spacer or a resin layer disposed around the spacer is used as a mask to form a superfine pattern.