The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
May. 07, 2010
Hung Chih Tsai, Kaohsiung County, TW;
Chih Chieh Chen, Taoyuan County, TW;
Sheng Chen Chung, Hsin-Chu, TW;
Kong Beng Thei, Hsin-Chu Country, TW;
Harry Chuang, Austin, TX (US);
Hung Chih Tsai, Kaohsiung County, TW;
Chih Chieh Chen, Taoyuan County, TW;
Sheng Chen Chung, Hsin-Chu, TW;
Kong Beng Thei, Hsin-Chu Country, TW;
Harry Chuang, Austin, TX (US);
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Abstract
A method for removing hard masks on gates in a semiconductor manufacturing process is conducted as follows. First of all, a first gate and a second gate with hard masks are formed on a semiconductor substrate, wherein the second gate is larger than the first gate. The first gate and second gate could be associated with silicon-germanium (SiGe) source and drain regions to form p-type transistors. Next, a photoresist layer is deposited, and an opening of the photoresist layer is formed on the hard mask of the second gate. Then, the photoresist layer on the first and second gates is removed completely by etching back. Because there is no photoresist residue, the hard masks on the first and second gates can be removed completely afterwards.