The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Sep. 20, 2013
Ngk Insulators, Ltd., Aichi-prefecture, JP;
Katsuhiro Imai, Nagoya, JP;
Makota Iwai, Kasugai, JP;
Takanao Shimodaira, Nagoya, JP;
Masahiro Sakai, Nagoya, JP;
Shuhei Higashihara, Nagoya, JP;
Takayuki Hirao, Nagoya, JP;
NGK Insulators, Ltd., Aichi-prefeccture, JP;
Abstract
A gallium nitride layer is produced using a seed crystal substrate by flux method. The seed crystal substrateA includes a supporting body, a plurality of seed crystal layersA each comprising gallium nitride single crystal and separated from one another, a low temperature buffer layerprovided between the seed crystal layersA and the supporting body and made of a nitride of a group III metal element, and an exposed layerexposed to spaces between the adjacent seed crystal layersA and made of aluminum nitride single crystal or aluminum gallium nitride single crystal. The gallium nitride layer is grown on the seed crystal layers by flux method.