Kasugai, Japan

Makota Iwai


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: The Innovations of Makota Iwai

Introduction

Makota Iwai is a notable inventor based in Kasugai, Japan. He has made significant contributions to the field of materials science, particularly in the production of gallium nitride layers. His innovative work has implications for various applications in electronics and optoelectronics.

Latest Patents

Makota Iwai holds a patent for a "Method for producing gallium nitride layer and seed crystal substrate used in same." This patent describes a process where a gallium nitride layer is produced using a seed crystal substrate by the flux method. The seed crystal substrate includes a supporting body, multiple seed crystal layers made of gallium nitride single crystal, and a low-temperature buffer layer made of a nitride of a group III metal element. The gallium nitride layer is then grown on the seed crystal layers using this innovative method.

Career Highlights

Makota Iwai is currently employed at NGK Insulators, Inc., where he continues to advance his research and development efforts. His work has been instrumental in enhancing the efficiency and quality of gallium nitride layers, which are crucial for modern electronic devices.

Collaborations

Some of his notable coworkers include Katsuhiro Imai and Takanao Shimodaira. Their collaborative efforts contribute to the innovative environment at NGK Insulators, Inc., fostering advancements in materials science.

Conclusion

Makota Iwai's contributions to the field of gallium nitride production highlight his role as a leading inventor in materials science. His innovative methods and collaborative spirit continue to drive advancements in technology.

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