The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2014
Filed:
Aug. 07, 2012
Shin-chi Chen, Tainan, TW;
Yu-tsung Lai, Tainan, TW;
Jiunn-hsiung Liao, Tainan, TW;
Guang-yaw Hwang, Tainan, TW;
Shin-Chi Chen, Tainan, TW;
Yu-Tsung Lai, Tainan, TW;
Jiunn-Hsiung Liao, Tainan, TW;
Guang-Yaw Hwang, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A pattern forming method is disclosed. The method includes the steps of: forming a dielectric layer on a substrate; forming a first patterned mask on the dielectric layer, wherein the first patterned mask comprises an opening; forming a material layer on the dielectric layer and covering the first patterned mask; forming a second patterned mask on the material layer, wherein the second patterned mask comprises a first aperture; forming a second aperture in the second patterned mask after forming the first aperture, wherein the second aperture and the first aperture comprise a gap therebetween and overlap the opening; and utilizing the second patterned mask as an etching mask for partially removing the material layer and the dielectric layer through the first aperture and the second aperture.