Method of forming core-shell type structure and method of manufacturing transistor using the same

Abstract

Example embodiments relate to a method of forming a core-shell structure. According to a method, a region in which the core-shell structure will be formed is defined on a substrate, and a core and a shell layer may be sequentially stacked in the defined region. A first shell layer may further be formed between the substrate and the core. When the core and the shell layer are sequentially stacked in the core-shell region, the method may further include forming a groove on the substrate, forming the first shell layer covering surfaces of the groove, forming the core in the groove of which surfaces are covered by the first shell layer, and forming a second shell layer covering the core.