The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Jul. 06, 2012
Anton Mauder, Kolbermoor, DE;
Franz Hirler, Isen, DE;
Wolfgang Lehnert, Lintach, DE;
Rudolf Berger, Regensburg, DE;
Klemens Pruegl, Regensburg, DE;
Hans-joachim Schulze, Taufkirchen, DE;
Helmut Strack, Munich, DE;
Anton Mauder, Kolbermoor, DE;
Franz Hirler, Isen, DE;
Wolfgang Lehnert, Lintach, DE;
Rudolf Berger, Regensburg, DE;
Klemens Pruegl, Regensburg, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Helmut Strack, Munich, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A power semiconductor device has a semiconductor body which includes an active area and a peripheral area which both define a horizontal main surface of the semiconductor body. The semiconductor body further includes an n-type semiconductor layer, a pn junction and at least one trench. The n-type semiconductor layer is embedded in the semiconductor body and extends to the main surface in the peripheral area. The pn junction is arranged between the n-type semiconductor layer and the main surface in the active area. The at least one trench extends in the peripheral area from the main surface into the n-type semiconductor layer and includes a dielectric layer with fixed negative charges. In the vertical direction, the dielectric layer is arranged both below and above the pn junction. The dielectric layer with fixed negative charges typically has a negative net charge. Further, a method for forming a semiconductor device is provided.