The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2014

Filed:

Feb. 09, 2010
Applicants:

Chun Hsiung Tsai, Xinpu Township, TW;

Chien-tai Chan, Hsin-Chu, TW;

Mao-rong Yeh, Tao Yuan, TW;

Da-wen Lin, Hsin-Chu, TW;

Inventors:

Chun Hsiung Tsai, Xinpu Township, TW;

Chien-Tai Chan, Hsin-Chu, TW;

Mao-Rong Yeh, Tao Yuan, TW;

Da-Wen Lin, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/26 (2006.01); H01L 21/42 (2006.01); H01L 21/223 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming an integrated circuit includes providing a semiconductor wafer including a semiconductor fin dispatched on a surface of the semiconductor wafer; forming a dopant-rich layer having an impurity on a top surface and sidewalls of the semiconductor fin, wherein the impurity is of n-type or p-type; performing a knock-on implantation to drive the impurity into the semiconductor fin; and removing the dopant-rich layer.


Find Patent Forward Citations

Tsai, Chun. (2014). Techniques for finfet doping (U.S. Patent No. 8785286). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8785286

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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