The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Mar. 08, 2012
Ji-yin Tsai, Zhudong Township, TW;
Yao-tsung Huang, Kaohsiung, TW;
Chih-hsin Ko, Fongshan, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Ji-Yin Tsai, Zhudong Township, TW;
Yao-Tsung Huang, Kaohsiung, TW;
Chih-Hsin Ko, Fongshan, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a channel region in a workpiece, and forming a source or drain region proximate the channel region. The source or drain region includes a contact resistance-lowering material layer comprising SiP, SiAs, or a silicide. The source or drain region also includes a channel-stressing material layer comprising SiCP or SiCAs.