The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
May. 29, 2012
Lance Scudder, Sunnyvale, CA (US);
Pushkar Ranade, Los Gatos, CA (US);
Dalong Zhao, San Jose, CA (US);
Teymur Bakhishev, San Jose, CA (US);
Urupattur C. Sridharan, San Jose, CA (US);
Taiji Ema, Mie-ken, JP;
Toshifumi Mori, Hachiouji, JP;
Mitsuaki Hori, Kuwana, JP;
Junji OH, Kuwana, JP;
Kazushi Fujita, Kuwana, JP;
Yasunobu Torii, Kuwana, JP;
Lance Scudder, Sunnyvale, CA (US);
Pushkar Ranade, Los Gatos, CA (US);
Dalong Zhao, San Jose, CA (US);
Teymur Bakhishev, San Jose, CA (US);
Urupattur C. Sridharan, San Jose, CA (US);
Taiji Ema, Mie-ken, JP;
Toshifumi Mori, Hachiouji, JP;
Mitsuaki Hori, Kuwana, JP;
Junji Oh, Kuwana, JP;
Kazushi Fujita, Kuwana, JP;
Yasunobu Torii, Kuwana, JP;
SuVolta, Inc., Los Gatos, CA (US);
Abstract
Silicon loss prevention in a substrate during transistor device element manufacture is achieved by limiting a number of photoresist mask and chemical oxide layer stripping opportunities during the fabrication process. This can be achieved through the use of a protective layer that remains on the substrate during formation and stripping of photoresist masks used in identifying the implant areas into the substrate. In addition, undesirable reworking steps due to photoresist mask misalignment are eliminated or otherwise have no effect on consuming silicon from the substrate during fabrication of device elements. In this manner, device elements with the same operating characteristics and performance can be consistently made from lot to lot.