The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Oct. 12, 2012
Applicants:
Jong Mun Kim, San Jose, CA (US);
Jairaj Payyapilly, Sunnyvale, CA (US);
Kenny Linh Doan, San Jose, CA (US);
Inventors:
Jong Mun Kim, San Jose, CA (US);
Jairaj Payyapilly, Sunnyvale, CA (US);
Kenny Linh Doan, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Plasma etching of boron-doped carbonaceous mask layers with an etchant gas mixture including CFor CHF, and at least one of COS and CFI. Etchant gas mixtures may further include a carbon-free fluorine source gas, such as SFor NF, and/or an oxidizer, such as O, for higher etch rates. Nitrogen-containing source gases may also be provided in the etchant gas mixture to reduce sidewall bowing in high aspect ratio (HAR) feature etches.