The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Jan. 22, 2010
Applicants:
Masahiro Horigome, Yamanashi, JP;
Takuya Kurotori, Yamanashi, JP;
Yasuo Kobayashi, Yamanashi, JP;
Takaaki Matsuoka, Tokyo, JP;
Toshihisa Nozawa, Hyogo, JP;
Inventors:
Masahiro Horigome, Yamanashi, JP;
Takuya Kurotori, Yamanashi, JP;
Yasuo Kobayashi, Yamanashi, JP;
Takaaki Matsuoka, Tokyo, JP;
Toshihisa Nozawa, Hyogo, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step.