The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Sep. 28, 2011
Pong-wey Huang, Tainan, TW;
Chan-lon Yang, Taipei, TW;
Chang-hung Kung, Kaohsiung, TW;
Wei-hsin Liu, Changhua County, TW;
Ya-hsueh Hsieh, Kaohsiung, TW;
Bor-shyang Liao, Kaohsiung, TW;
Teng-chun Hsuan, Tainan, TW;
Chun-yao Yang, Kaohsiung, TW;
Pong-Wey Huang, Tainan, TW;
Chan-Lon Yang, Taipei, TW;
Chang-Hung Kung, Kaohsiung, TW;
Wei-Hsin Liu, Changhua County, TW;
Ya-Hsueh Hsieh, Kaohsiung, TW;
Bor-Shyang Liao, Kaohsiung, TW;
Teng-Chun Hsuan, Tainan, TW;
Chun-Yao Yang, Kaohsiung, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor process includes the following steps. An interdielectric layer is formed on a substrate and the interdielectric layer has a first recess and a second recess. A metal layer is formed to cover the surface of the interdielectric layer, the first recess and the second recess. Partially fills a sacrificed material into the first recess and the second recess so that a portion of the metal layer in each of the recesses is respectively covered. The uncovered metal layer in each of the recesses is removed. The sacrificed material is removed. An etching process is performed to remove the remaining metal layer in the first recess and reserve the remaining metal layer in the second recess.