The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2014

Filed:

Sep. 14, 2012
Applicants:

Hidenori Miyoshi, Nirasaki, JP;

Hitoshi Itoh, Nirasaki, JP;

Hiroshi Sato, Nirasaki, JP;

Inventors:

Hidenori Miyoshi, Nirasaki, JP;

Hitoshi Itoh, Nirasaki, JP;

Hiroshi Sato, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A film forming method includes a step of arranging a wafer, on which an insulating film is formed, in a processing chamber of a film forming apparatus and a surface modification step of supplying a compound gas containing silicon atoms and an OH group-donating gas into the processing chamber so that Si—OH groups are formed on the surface of the insulating film. The film forming method further includes a film forming step of supplying a film forming gas containing a manganese-containing material into the processing chamber so that a manganese-containing film is formed on the surface of the insulating film on which the Si—OH groups have been formed through a CVD method.


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