The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2014

Filed:

Aug. 17, 2010
Applicants:

Ching-hsu Chang, Xinzhuang, TW;

Hung-chun Wang, Taichung County, TW;

Boren Luo, Zhubei, TW;

Wen-chun Huang, Tainan County, TW;

Ru-gun Liu, Hsinchu, TW;

Inventors:

Ching-Hsu Chang, Xinzhuang, TW;

Hung-Chun Wang, Taichung County, TW;

Boren Luo, Zhubei, TW;

Wen-Chun Huang, Tainan County, TW;

Ru-Gun Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/80 (2012.01);
U.S. Cl.
CPC ...
Abstract

Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A planarizing process is provided to remove the absorber layer above the top surface of the hard mask layer and form an absorber in the opening, wherein the absorber is substantially co-planar with the top surface of the hard mask layer.


Find Patent Forward Citations

Loading…