The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Oct. 08, 2010
Chih-hung Tseng, Zhutang Township, TW;
Da-wen Lin, Hsinchu, TW;
Chien-tai Chan, Hsinchu, TW;
Chia-pin Lin, Xinpu Township, TW;
Li-wen Weng, Zhunan Township, TW;
An-shen Chang, Jubei, TW;
Chung-cheng Wu, Ju-Bei, TW;
Chih-Hung Tseng, Zhutang Township, TW;
Da-Wen Lin, Hsinchu, TW;
Chien-Tai Chan, Hsinchu, TW;
Chia-Pin Lin, Xinpu Township, TW;
Li-Wen Weng, Zhunan Township, TW;
An-Shen Chang, Jubei, TW;
Chung-Cheng Wu, Ju-Bei, TW;
Abstract
A transistor includes a notched fin covered under a shallow trench isolation layer. One or more notch may be used, the size of which may vary along a lateral direction of the fin. In some embodiments, The notch is formed using anisotropic wet etching that is selective according to silicon orientation. Example wet etchants are tetramethylammonium hydroxide (TMAH) or potassium hydroxide (KOH).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile