The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Nov. 20, 2012
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Toppan Printing Co., Ltd., Tokyo, JP;
Hiroki Yoshikawa, Joetsu, JP;
Yukio Inazuki, Joetsu, JP;
Ryuji Koitabashi, Joetsu, JP;
Hideo Kaneko, Joetsu, JP;
Yosuke Kojima, Tokyo, JP;
Takashi Haraguchi, Tokyo, JP;
Tomohito Hirose, Tokyo, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Toppan Printing Co., Ltd., Tokyo, JP;
Abstract
A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a halftone phase shift mask. The mask includes a transparent substrate and a pattern of halftone phase shift film of a material comprising a transition metal, silicon, nitrogen and oxygen and having an atomic ratio (Met/Si) of 0.18-0.25, a nitrogen content of 25-50 atom %, and an oxygen content of 5-20 atom %. The mask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm.