The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2014

Filed:

Mar. 12, 2012
Applicants:

Mukta G. Farooq, Hopewell Junction, NY (US);

Emily R. Kinser, Poughkeepsie, NY (US);

Ian D. Melville, Highland, NY (US);

Krystyna Waleria Semkow, Poughquag, NY (US);

Inventors:

Mukta G. Farooq, Hopewell Junction, NY (US);

Emily R. Kinser, Poughkeepsie, NY (US);

Ian D. Melville, Highland, NY (US);

Krystyna Waleria Semkow, Poughquag, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a process of making a semiconductor device wherein an insulation layer has a copper plug in contact with the last wiring layer of the device. There may also be a barrier layer separating the copper plug from the insulation layer. There may also be a cap layer over the copper plug to protect it from oxidation. There may also be a dielectric layer over the cap layer.


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