The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Jul. 09, 2012
Nian-fuh Cheng, Hsinchu, TW;
Yu-po Tang, Taipei, TW;
Chien-fu Lee, Hsinchu, TW;
Sheng-wen Lin, Kaohsiung, TW;
Yong-cheng Lin, Hsinchu, TW;
Wen-chun Huang, Tainan, TW;
Ru-gun Liu, Hsinchu, TW;
Nian-Fuh Cheng, Hsinchu, TW;
Yu-Po Tang, Taipei, TW;
Chien-Fu Lee, Hsinchu, TW;
Sheng-Wen Lin, Kaohsiung, TW;
Yong-Cheng Lin, Hsinchu, TW;
Wen-Chun Huang, Tainan, TW;
Ru-Gun Liu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure describes an OPC method of preparing data for forming a mask. The method includes setting a plurality of dissection points at the main feature and further includes setting a target point at the main feature. The method includes arranging the two dissection points crossing the main feature symmetrically each other. The method includes separating two adjacent dissection points at one side of the main feature by a maximum resolution of the mask writer. The method includes dividing the main feature into a plurality of segments using the dissection points. The method includes performing an OPC convergence simulation to a target point. The method includes correcting the segments belonging to an ambit of the target point and further includes correcting the segment shared by two ambits.