The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Apr. 17, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Huai-Yang Huang, Jhonghe, TW;
Yu-Kuan Lin, Taipei County, TW;
Sheng Chiang Hung, Hsin-Chu, TW;
Feng-Ming Chang, Chia-Yi, TW;
Jui-Lin Chen, Taipei, TW;
Ping-Wei Wang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
SRAM cells and SRAM cell arrays are described. In one embodiment, an SRAM cell includes a first inverter and a second inverter cross-coupled with the first inverter to form a first data storage node and a complimentary second data storage node for latching a value. The SRAM cell further includes a first pass-gate transistor and a switch transistor. A first source/drain of the first pass-gate transistor is coupled to the first data storage node, and a second source/drain of the first pass-gate transistor is coupled to a first bit line. The first source/drain of the switch transistor is coupled to the gate of the first pass-gate transistor.