The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Jan. 31, 2012
Applicants:
Ching-hsiung Lo, Jhubei, TW;
Jam-wem Lee, Zhubei, TW;
Wun-jie Lin, Hsin-Chu, TW;
Jen-chou Tseng, Jhudong Township, TW;
Inventors:
Ching-Hsiung Lo, Jhubei, TW;
Jam-Wem Lee, Zhubei, TW;
Wun-Jie Lin, Hsin-Chu, TW;
Jen-Chou Tseng, Jhudong Township, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device may include body contacts on a finFET device for ESD protection. The semiconductor device comprises a semiconductor fin, a source/drain region and a body contact. The source/drain region and the body contact are in the semiconductor fin. A portion of the fin is laterally between the source/drain region and the body contact. The semiconductor fin is on a substrate.