The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Jun. 19, 2012
Chang-hsiao Lee, Tainan, TW;
Hsin-yu Chen, Nantou County, TW;
Yu-tsung Lai, Taichung, TW;
Jiunn-hsiung Liao, Tainan, TW;
Shih-chun Tsai, Pingtung County, TW;
Chang-Hsiao Lee, Tainan, TW;
Hsin-Yu Chen, Nantou County, TW;
Yu-Tsung Lai, Taichung, TW;
Jiunn-Hsiung Liao, Tainan, TW;
Shih-Chun Tsai, Pingtung County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating a dual damascene structure includes the following steps. At first, a dielectric layer, a dielectric mask layer and a metal mask layer are sequentially formed on a substrate. A plurality of trench openings is formed in the metal mask layer, and a part of the metal mask layer is exposed in the bottom of each of the trench openings. Subsequently, a plurality of via openings are formed in the dielectric mask layer, and a part of the dielectric mask layer is exposed in a bottom of each of the via openings. Furthermore, the trench openings and the via openings are transferred to the dielectric layer to form a plurality of dual damascene openings.