The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Jul. 17, 2012
Ming Han Lee, Taipei, TW;
Hai-ching Chen, Hsinchu, TW;
Hsiang-huan Lee, Jhodong Township, TW;
Tien-i Bao, Dayuan Township, TW;
Chi-lin Teng, Taichung, TW;
Ming Han Lee, Taipei, TW;
Hai-Ching Chen, Hsinchu, TW;
Hsiang-Huan Lee, Jhodong Township, TW;
Tien-I Bao, Dayuan Township, TW;
Chi-Lin Teng, Taichung, TW;
Taiwan Semiconductor Manufactring Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure is directed to a method of manufacturing an interconnect structure in which a low-k dielectric layer is formed over a semiconductor substrate followed by formation of a copper or copper alloy layer over the low-k dielectric layer. The copper or copper alloy layer is patterned and etched to form a copper body having recesses, which are then filled with a low-k dielectric material. The method allows for formation of a damascene structures without encountering the various problems presented by non-planar features and by porus low-K dielectric damage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile