The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2014

Filed:

Aug. 02, 2011
Applicants:

Robert P. Fabinski, Rochester, NY (US);

Eric J. Meisenzahl, Ontario, NY (US);

James E. Doran, Ontario, NY (US);

Inventors:

Robert P. Fabinski, Rochester, NY (US);

Eric J. Meisenzahl, Ontario, NY (US);

James E. Doran, Ontario, NY (US);

Assignee:

Truesense Imaging, Inc., Rochester, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for producing a measurement structure for measuring alignment of patterns formed in one or more layers of patternable material uses multiple exposure tools having different resolution limits and maximum expose field sizes. The measurement structure includes multiple complementary and coincident parts. An abutting field pattern is exposed and stitched in a layer of patternable material using a first exposure tool and a first mask. The abutting field pattern includes a first portion of the multiple complementary parts. A periphery pattern is exposed in the same layer or in a different layer of patternable material using a second exposure tool and a second mask. The periphery pattern includes a second portion of the multiple complementary parts. A maximum expose field of the first exposure tool is smaller than the maximum expose field of the second exposure tool.


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