The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Nov. 01, 2012
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yu-Hung Lin, Taichung, TW;
Chi-Yu Chou, Zhubei, TW;
Kuei-Pin Lee, New Taipei, TW;
Chen-Kuang Lien, Kaohsiung, TW;
Yu-Chang Hsiao, Taipei, TW;
Yao-Hsiang Liang, Shinchu, TW;
Yu-Min Chang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for forming an interconnect structure includes forming a dielectric layer overlying a substrate, forming a metal-containing layer in the dielectric layer, forming a barrier layer overlying the metal-containing layer, and performing a thermal process to form a metal oxide layer underlying the conductive layer. The metal oxide layer is a barrier layer formed at the boundary between the dielectric layer and the metal-containing layer.