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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8721846 B1

PDFFull Text
Date of Patent:
May. 13, 2014

Filed:

Nov. 29, 2005

Method of forming film, film forming apparatus and storage medium

Applicants:

Naoki Yoshii, Nirasaki, JP;

Yasuhiko Kojima, Nirasaki, JP;

Inventors:

Naoki Yoshii, Nirasaki, JP;

Yasuhiko Kojima, Nirasaki, JP;

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:

Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Michael Band

Int. Cl.
CPC ...
C23C 14/00 (2006.01); C23C 14/32 (2006.01); C25B 9/00 (2006.01); C25B 11/00 (2006.01); C25B 13/00 (2006.01); H01L 21/44 (2006.01); C23C 14/16 (2006.01); C23C 10/06 (2006.01); C23C 14/14 (2006.01); C23C 26/00 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01J 37/34 (2006.01); C23C 14/34 (2006.01); C23C 10/02 (2006.01);
U.S. Cl.
CPC ...
C23C 14/165 (2013.01); C23C 10/06 (2013.01); C23C 14/14 (2013.01); C23C 26/00 (2013.01); H01L 21/2855 (2013.01); H01L 21/28562 (2013.01); H01L 21/76843 (2013.01); H01L 21/76856 (2013.01); H01L 21/28556 (2013.01); H01J 37/34 (2013.01); C23C 14/0057 (2013.01); C23C 14/345 (2013.01); C23C 10/02 (2013.01);
Abstract

A film forming method includes mounting a substrate on a mounting member after loading the substrate into a reaction chamber, adsorbing a compound of a first metal on a surface of the substrate by supplying a source gas containing the compound of the first metal into the reaction chamber, reducing the compound of the first metal adsorbed on the substrate by making a reducing gas contact therewith to thereby obtain a first metal layer, and alloying the first metal and a second metal to obtain an alloy layer of the first metal and the second metal by injecting the second metal into the first metal layer. The second metal is ejected from a target electrode facing the substrate by making a sputtering plasma contact with the target electrode, and at least a surface of the target electrode is formed of the second metal different from the first metal.

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