The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Nov. 29, 2012
Kiwamu Sakuma, Yokohama, JP;
Haruka Kusai, Yokohama, JP;
Shosuke Fujii, Fujisawa, JP;
LI Zhang, Fuchu, JP;
Masahiro Kiyotoshi, Yokkaichi, JP;
Masao Shingu, Yokkaichi, JP;
Kiwamu Sakuma, Yokohama, JP;
Haruka Kusai, Yokohama, JP;
Shosuke Fujii, Fujisawa, JP;
Li Zhang, Fuchu, JP;
Masahiro Kiyotoshi, Yokkaichi, JP;
Masao Shingu, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes first to n-th semiconductor layers (n is a natural number equal to or more than 2) being stacked in order from a surface of an insulating layer in a first direction perpendicular to the surface of the insulating layer, the first to n-th semiconductor layers extending in a second direction parallel to the surface of the insulating layer, the first to n-th semiconductor layers being insulated from each other, a common electrode connected to the first to n-th semiconductor layers in a first end of the second direction thereof, and a layer select transistor which uses the first to n-th semiconductor layers as channels and which selects one of the first to n-th semiconductor layers.