The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Sep. 14, 2011
Toshihiko Nagase, Yokohama, JP;
Tadashi Kai, Tokyo, JP;
Makoto Nagamine, Tokyo, JP;
Katsuya Nishiyama, Yokohama, JP;
Eiji Kitagawa, Yokohama, JP;
Tadaomi Daibou, Yokohama, JP;
Koji Ueda, Kamakura, JP;
Hiroaki Yoda, Kawasaki, JP;
Kay Yakushiji, Tsukuba, JP;
Shinji Yuasa, Tsukuba, JP;
Hitoshi Kubota, Tsukuba, JP;
Taro Nagahama, Tsukuba, JP;
Akio Fukushima, Tsukuba, JP;
Koji Ando, Tsukuba, JP;
Toshihiko Nagase, Yokohama, JP;
Tadashi Kai, Tokyo, JP;
Makoto Nagamine, Tokyo, JP;
Katsuya Nishiyama, Yokohama, JP;
Eiji Kitagawa, Yokohama, JP;
Tadaomi Daibou, Yokohama, JP;
Koji Ueda, Kamakura, JP;
Hiroaki Yoda, Kawasaki, JP;
Kay Yakushiji, Tsukuba, JP;
Shinji Yuasa, Tsukuba, JP;
Hitoshi Kubota, Tsukuba, JP;
Taro Nagahama, Tsukuba, JP;
Akio Fukushima, Tsukuba, JP;
Koji Ando, Tsukuba, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A magnetoresistive element according to an embodiment includes: a first and second magnetic layers having an easy axis of magnetization in a direction perpendicular to a film plane; and a first nonmagnetic layer interposed between the first and second magnetic layers, at least one of the first and second magnetic layers including a structure formed by stacking a first and second magnetic films, the second magnetic film being located closer to the first nonmagnetic layer, the second magnetic film including a structure formed by repeating stacking of a magnetic material layer and a nonmagnetic material layer at least twice, the nonmagnetic material layers of the second magnetic film containing at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V, and Cr, one of the first and second magnetic layers having a magnetization direction that is changed by applying a current.