The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Feb. 07, 2012
Thomas A. Ponnuswamy, Sherwood, OR (US);
John H. Sukamto, Lake Oswego, OR (US);
Jonathan D. Reid, Sherwood, OR (US);
Steven T. Mayer, Lake Oswego, OR (US);
Huanfeng Zhu, Tigard, OR (US);
Thomas A. Ponnuswamy, Sherwood, OR (US);
John H. Sukamto, Lake Oswego, OR (US);
Jonathan D. Reid, Sherwood, OR (US);
Steven T. Mayer, Lake Oswego, OR (US);
Huanfeng Zhu, Tigard, OR (US);
Novellus Systems, Inc., Fremont, CA (US);
Abstract
Disclosed are methods of depositing and annealing a copper seed layer. A copper seed layer may be deposited on a ruthenium layer disposed on a surface of a wafer and on features in the wafer. The thickness of the ruthenium layer may be about 40 Angstroms or less. The copper seed layer may be annealed in a reducing atmosphere having an oxygen concentration of about 2 parts per million or less. Annealing the copper seed layer in a low-oxygen atmosphere may improve the properties of the copper seed layer.