The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8703609 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 22, 2014

Filed:

Jul. 01, 2011
Applicants:

Chen-cheng Kuo, Chu-Pei, TW;

Chen Chen-shien, Zhubei, TW;

Kai-ming Ching, Jhudong Township, Hsinchu County, TW;

Chih-hua Chen, Taipei, TW;

Inventors:

Chen-Cheng Kuo, Chu-Pei, TW;

Chen Chen-Shien, Zhubei, TW;

Kai-Ming Ching, Jhudong Township, Hsinchu County, TW;

Chih-Hua Chen, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a semiconductor device including providing a substrate having a front surface and a back surface. A masking element is formed on the front surface of the substrate. The masking element includes a first layer having a first opening and a second layer having a second opening of a greater width than the first opening. The second opening is a tapered opening. The method further includes etching a tapered profile via extending from the front surface to the back surface of the substrate using the formed masking element.


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