The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Nov. 23, 2010
Applicants:
Tai-yung Yu, Rende, TW;
Yu-sheng Su, Tainan, TW;
Li-te Hsu, Shanhua, TW;
Jin-lin Liang, Alian, TW;
Pin-chia Su, Shanhua, TW;
Inventors:
Tai-Yung Yu, Rende, TW;
Yu-Sheng Su, Tainan, TW;
Li-Te Hsu, Shanhua, TW;
Jin-Lin Liang, Alian, TW;
Pin-Chia Su, Shanhua, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/08 (2006.01);
U.S. Cl.
CPC ...
Abstract
An etchant for removing a porous low-k dielectric layer on a semiconductor substrate includes a hydrofluoric acid-based solvent, a dilating additive for dilating the pores in the porous low-k dielectric, and a passivating additive that forms a passivation layer at the interface between the low-k dielectric layer and the semiconductor substrate.