The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Apr. 02, 2010
Cheng Cheng Kuo, Hsinchu County, TW;
Luke Lo, Taoyuan County, TW;
Minghsing Tsai, Hsinchu County, TW;
Ken-yu Chang, Hsinchu, TW;
Jye-yen Cheng, Taichung, TW;
Jeng-shiun Ho, Hsinchu, TW;
Hua-tai Lin, Hsinchu, TW;
Chih-hsiang Yao, Taipei, TW;
Cheng Cheng Kuo, Hsinchu County, TW;
Luke Lo, Taoyuan County, TW;
Minghsing Tsai, Hsinchu County, TW;
Ken-Yu Chang, Hsinchu, TW;
Jye-Yen Cheng, Taichung, TW;
Jeng-Shiun Ho, Hsinchu, TW;
Hua-Tai Lin, Hsinchu, TW;
Chih-Hsiang Yao, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Semiconductor integrated circuit line structures for improving a process window in the vicinity of dense-to-isolated pattern transition areas and a technique to implement the line structures in the layout process are described in this disclosure. The disclosed structure includes a semiconductor substrate, and a material layer above the substrate. The material layer has a closely spaced dense line structure, an isolated line structure next to the dense line structure, and a dummy line shoulder structure formed in the vicinity of the dense line and the isolated line structures. One end of the dummy line shoulder structure connects to the isolated line structure and another end extends away from the isolated line structure in an orientation substantially perpendicular to the isolated line structure.