The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Jan. 14, 2010
Applicants:
Jei-ming Chen, Tainan, TW;
Hsiu-lien Liao, Tai-Chung, TW;
Yu-tuan Tsai, Tainan County, TW;
Teng-chun Tsai, Tainan, TW;
Inventors:
Jei-Ming Chen, Tainan, TW;
Hsiu-Lien Liao, Tai-Chung, TW;
Yu-Tuan Tsai, Tainan County, TW;
Teng-Chun Tsai, Tainan, TW;
Assignee:
United Microelectronics Corp., Science Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
Abstract
A structure of a strained-silicon transistor includes a PMOS disposed on a substrate, a silicon nitride layer positioned on the PMOS, and a compressive stress film disposed on the silicon nitride layer, wherein the silicon nitride has a stress between −0.1 Gpa and −3.2 Gpa, and the stress of the silicon nitride is smaller than the stress of the compressive stress layer.