The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Jun. 22, 2011
Koichi Yatsuda, Tokyo, JP;
Hiromasa Mochiki, Tokyo, JP;
Koichi Yatsuda, Tokyo, JP;
Hiromasa Mochiki, Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
There is provided a substrate processing method capable of preventing the decrease in etching efficiency by positive ions and increasing the overall etching efficiency by using negative ions. The substrate processing method includes applying a plasma RF and a bias RF in the pattern of a pulse wave, respectively. The substrate processing method repeatedly performs the steps of: () etching a substrate by positive ions in plasma by applying both the plasma RF and the bias RF; () generating negative ions in a processing chamber by stopping the application of both the plasma RF and the bias RF; and () attracting the negative ions to the substrate by applying the bias RF and stopping the application of the plasma RF. A duty ratio of the bias RF is set to be greater than a duty ratio of the plasma RF.