The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Sep. 12, 2012
Jeffrey F. Roeder, Brookfield, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Bryan C. Hendrix, Danbury, CT (US);
Gregory T. Stauf, Branchburg, NJ (US);
Chongying Xu, New Milford, CT (US);
William Hunks, Waterbury, CT (US);
Tianniu Chen, Rocky Hill, CT (US);
Matthias Stender, Aurora, IL (US);
Jeffrey F. Roeder, Brookfield, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Bryan C. Hendrix, Danbury, CT (US);
Gregory T. Stauf, Branchburg, NJ (US);
Chongying Xu, New Milford, CT (US);
William Hunks, Waterbury, CT (US);
Tianniu Chen, Rocky Hill, CT (US);
Matthias Stender, Aurora, IL (US);
Advanced Technology Materials, Inc., Danbury, CT (US);
Abstract
A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.