The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Jun. 24, 2011
Chin-cheng Chien, Tainan, TW;
Tzung-ying Lee, Ping-Tung County, TW;
Tsuo-wen LU, Kaohsiung, TW;
Shu-yen Chan, Changhua County, TW;
Jei-ming Chen, Tainan, TW;
Yu-min Lin, Tainan, TW;
Chun-wei Hsu, Taipei, TW;
Chin-Cheng Chien, Tainan, TW;
Tzung-Ying Lee, Ping-Tung County, TW;
Tsuo-Wen Lu, Kaohsiung, TW;
Shu-Yen Chan, Changhua County, TW;
Jei-Ming Chen, Tainan, TW;
Yu-Min Lin, Tainan, TW;
Chun-Wei Hsu, Taipei, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor device includes: a substrate having a first region and a second region; a first gate structure disposed on the first region, wherein the first gate structure comprises a first high-k dielectric layer, a first work function metal layer, and a first metal layer disposed between the first high-k dielectric layer and the first work function metal layer; and a second gate structure disposed on the second region, wherein the second gate structure comprises a second high-k dielectric layer, a second work function metal layer, and a second metal layer disposed between the second high-k dielectric layer and the second work function metal layer, wherein the thickness of the second metal layer is lower than the thickness of the first metal layer.