The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Jul. 28, 2010
Chung-hsiu Cheng, Banqiao, TW;
Shih-hao Wu, Hsinchu, TW;
Chih-hsien Hsu, Hsinchu, TW;
Chia-chi Chung, Hsinchu, TW;
Wei-yueh Tseng, Hsinchu, TW;
Chung-Hsiu Cheng, Banqiao, TW;
Shih-Hao Wu, Hsinchu, TW;
Chih-Hsien Hsu, Hsinchu, TW;
Chia-Chi Chung, Hsinchu, TW;
Wei-Yueh Tseng, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of fabricating a semiconductor device is illustrated. A substrate having a plurality of trenches is provided. The plurality of trenches include trenches having differing widths. A first layer is formed on the substrate including in the plurality of trenches. Forming the first layer creates an indentation in the first layer in a region overlying a trench (e.g., wide trench). A second layer is formed in the indentation. The first layer is etched while the second layer remains in the indentation. The second layer may protect the region of indentation from further reduction in thickness. In an embodiment, the first layer is polysilicon and the second layer is BARC of photoresist.