The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2014

Filed:

Oct. 06, 2011
Applicants:

Sudharshanan Raghunathan, Albany, NY (US);

Sivananda Kanakasabapathy, Albany, NY (US);

Ryan O. Jung, Albany, NY (US);

Allen H Gabor, Hopewell Junction, NY (US);

Sean D. Burns, Yorktown Heights, NY (US);

Erin Catherine Mclellan, Albany, NY (US);

Inventors:

Sudharshanan Raghunathan, Albany, NY (US);

Sivananda Kanakasabapathy, Albany, NY (US);

Ryan O. Jung, Albany, NY (US);

Allen H Gabor, Hopewell Junction, NY (US);

Sean D. Burns, Yorktown Heights, NY (US);

Erin Catherine McLellan, Albany, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiment of the present invention provides a method of forming a semiconductor device in a sidewall image transfer process with multiple critical dimensions. The method includes forming a multi-level dielectric layer over a plurality of mandrels, the multi-level dielectric layer having a plurality of regions covering the plurality of mandrels, the plurality of regions of the multi-level dielectric layer having different thicknesses; etching the plurality of regions of the multi-level dielectric layer into spacers by applying a directional etching process, the spacers being formed next to sidewalls of the plurality of mandrels and having different widths corresponding to the different thicknesses of the plurality of regions of the multi-level dielectric layer; removing the plurality of mandrels in-between the spacers; and transferring bottom images of the spacers into one or more layers underneath the spacers.


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