The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2014
Filed:
Oct. 22, 2012
Board of Trustees of Michigan State University, East Lansing, MI (US);
Fraunhofer Usa, Plymouth, MI (US);
Jes Asmussen, East Lansing, MI (US);
Timothy Grotjohn, Okemos, MI (US);
Donnie K. Reinhard, East Lansing, MI (US);
Thomas Schuelke, Brighton, MI (US);
M. Kagan Yaran, Lansing, MI (US);
Kadek W. Hemawan, East Lansing, MI (US);
Michael Becker, East Lansing, MI (US);
David King, Lansing, MI (US);
Yajun Gu, Lansing, MI (US);
Jing Lu, East Lansing, MI (US);
Board of Trustees of Michigan State University, East Lansing, MI (US);
Fraunhofer USA, Plymouth, MI (US);
Abstract
New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.