The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2014

Filed:

Feb. 28, 2012
Applicants:

Toshihiko Nagase, Yokohama, JP;

Tadashi Kai, Tokyo, JP;

Katsuya Nishiyama, Yokohama, JP;

Eiji Kitagawa, Yokohama, JP;

Tadaomi Daibou, Yokohama, JP;

Masahiko Nakayama, Yokohama, JP;

Makoto Nagamine, Komae, JP;

Shigeto Fukatsu, Yokohama, JP;

Masatoshi Yoshikawa, Yokohama, JP;

Hiroaki Yoda, Sagamihara, JP;

Inventors:

Toshihiko Nagase, Yokohama, JP;

Tadashi Kai, Tokyo, JP;

Katsuya Nishiyama, Yokohama, JP;

Eiji Kitagawa, Yokohama, JP;

Tadaomi Daibou, Yokohama, JP;

Masahiko Nakayama, Yokohama, JP;

Makoto Nagamine, Komae, JP;

Shigeto Fukatsu, Yokohama, JP;

Masatoshi Yoshikawa, Yokohama, JP;

Hiroaki Yoda, Sagamihara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a magnetoresistive element includes a first magnetic layer with a perpendicular and variable magnetization, a second magnetic layer with a perpendicular and invariable magnetization, and a first nonmagnetic layer between the first and second magnetic layer. The first magnetic layer has a laminated structure of first and second ferromagnetic materials. A magnetization direction of the first magnetic layer is changed by a current which pass through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer. A perpendicular magnetic anisotropy of the second ferromagnetic material is smaller than that of the first ferromagnetic material. A film thickness of the first ferromagnetic material is thinner than that of the second ferromagnetic material.


Find Patent Forward Citations

Nagase, Toshihiko. (2014). Magnetoresistive element and magnetic memory (U.S. Patent No. 8665639). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8665639

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…