The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Aug. 30, 2012
Daisuke Matsushita, Kanagawa-ken, JP;
Shosuke Fujii, Kanagawa-ken, JP;
Yoshifumi Nishi, Kanagawa-ken, JP;
Akira Takashima, Tokyo, JP;
Takayuki Ishikawa, Kanagawa-ken, JP;
Hidenori Miyagawa, Kanagawa-ken, JP;
Takashi Haimoto, Tokyo, JP;
Yusuke Arayashiki, Kanagawa-ken, JP;
Hideki Inokuma, Kanagawa-ken, JP;
Daisuke Matsushita, Kanagawa-ken, JP;
Shosuke Fujii, Kanagawa-ken, JP;
Yoshifumi Nishi, Kanagawa-ken, JP;
Akira Takashima, Tokyo, JP;
Takayuki Ishikawa, Kanagawa-ken, JP;
Hidenori Miyagawa, Kanagawa-ken, JP;
Takashi Haimoto, Tokyo, JP;
Yusuke Arayashiki, Kanagawa-ken, JP;
Hideki Inokuma, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode and the second electrode. The first electrode includes a metal contained in a matrix made of a conductive material. A cohesive energy of the metal is lower than a cohesive energy of the conductive material. A concentration of the metal at a central portion of the first electrode in a width direction thereof is higher than concentrations of the metal in two end portions of the first electrode in the width direction.