The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Dec. 20, 2012
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Zaifeng Tang, Shanghai, CN;
Yukun Lv, Shanghai, CN;
Chao Fang, Shanghai, CN;
HsuSheng Chang, Shanghai, CN;
Shanghai Huali Microelectronics Corporation, Shanghai, CH;
Abstract
The present invention discloses a method for reducing the morphological difference between N-doped and undoped poly-silicon gates after etching, comprising the following sequential steps: depositing a hard mask layer on a substrate template having N-doped poly-silicon and undoped poly-silicon to form an N-doped poly-silicon hard mask layer and an undoped poly-silicon hard mask layer respectively, and etching the undoped poly-silicon hard mask layer to make a thickness difference between the N-doped poly-silicon hard mask layer and the undoped poly-silicon hard mask layer; depositing an anti-reflection layer, and etching according to a predetermined pattern until exposing the N-doped poly-silicon, wherein when the N-doped poly-silicon is exposed, the undoped poly-silicon is etched to a certain degree; and removing residuals on the surface of the above formed structure, and etching to form an N-doped poly-silicon gate and an undoped poly-silicon gate, respectively.