The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
Jul. 17, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-chu, TW;
Billie Chen, Hsin-Chu, TW;
Hong-Dyi Chang, Taipei City, TW;
Pei-Chao Su, Zhudong Town, Hsinchu County, TW;
Kong-Beng Thei, Pao-Shan Village, Hsin-Chu County, TW;
Hun-Jan Tao, Hsinchu, TW;
Harry Hak-Lay Chuang, Crescent, SG;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Various semiconductor devices are disclosed. An exemplary device includes: a substrate; a gate structure disposed over the substrate, wherein the gate structure includes a source region and a drain region; a first etch stop layer disposed over the gate structure, a second etch stop layer disposed over the source region and the drain region; a dielectric layer disposed over the substrate; and a gate contact, a source contact, and a drain contact. The dielectric layer is disposed over both etch stop layers. The gate contact extends through the dielectric layer and the first etch stop layer to the gate structure. The source contact and the drain contact extend through the dielectric layer and the second etch stop layer respectively to the source region and the drain region.