The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
Jun. 12, 2012
Hanhong Chen, Milpitas, CA (US);
Wim Y. Deweerd, San Jose, CA (US);
Edward L Haywood, San Jose, CA (US);
Sandra G Malhotra, San Jose, CA (US);
Hiroyuki Ode, Higashihiroshima, JP;
Hanhong Chen, Milpitas, CA (US);
Wim Y. Deweerd, San Jose, CA (US);
Edward L Haywood, San Jose, CA (US);
Sandra G Malhotra, San Jose, CA (US);
Hiroyuki Ode, Higashihiroshima, JP;
Intermolecular, Inc., San Jose, CA (US);
Elpida Memory, Inc., Tokyo, JP;
Abstract
A metal oxide first electrode material for a MIM DRAM capacitor is formed wherein the first and/or second electrode materials or structures contain layers having one or more dopants up to a total doping concentration that will not prevent the electrode materials from crystallizing during a subsequent anneal step. Advantageously, the electrode doped with one or more of the dopants has a work function greater than about 5.0 eV. Advantageously, the electrode doped with one or more of the dopants has a resistivity less than about 1000 μΩ cm. Advantageously, the electrode materials are conductive molybdenum oxide.